SBT150-10JS Sanyo Semicon Device, SBT150-10JS Datasheet
SBT150-10JS
Manufacturer Part Number
SBT150-10JS
Description
Schottky Barrier Diode 100V 15A Rectifier
Manufacturer
Sanyo Semicon Device
Datasheet
1.SBT150-10JS.pdf
(3 pages)
Ordering number : ENA0502
SBT150-10JS
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note) * : Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
•
•
•
•
•
•
•
High frequency rectification (switching regulators, converters, choppers).
Tj=150 C.
Low forward voltage (V F max=0.80V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Micaless package facilitating mounting.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
SANYO Semiconductors
50Hz resistive load, Sine wave Tc=43 C
50Hz sine wave, 1 cycle
I R =2mA, Tj=25 C*
I F =6A, Tj=25 C*
V R =50V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
SBT150-10JS
Schottky Barrier Diode (Twin Type · Cathode Common)
100V, 15A Rectifier
Conditions
Conditions
DATA SHEET
82506SD MS IM TC-00000106
min
100
Ratings
typ
www.DataSheet4U.com
Ratings
180
--55 to +150
--55 to +150
max
0.80
100
105
0.2
4.0
15
80
No. A0502-1/3
C / W
Unit
Unit
mA
pF
V
V
A
A
V
V
C
C
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SBT150-10JS Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBT150-10JS SANYO Semiconductors Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier ...
Page 2
... P F (AV (1)Rectangular wav e =60 (2)Rectangular wav e =120 25 (3)Rectangular wav e =180 (4)Sine wav e =180 20 Rectangular wave (1) 15 360 Average Output Current SBT150-10JS Electrical Connection 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS 100 1.0 7 2.0 2.5 3.0 ...
Page 3
... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. SBT150-10JS 1000 ...