MT5C1008LL Austin Semiconductor, MT5C1008LL Datasheet - Page 4

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MT5C1008LL

Manufacturer Part Number
MT5C1008LL
Description
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
Manufacturer
Austin Semiconductor
Datasheet
DATA RETENTION WAVEFORM
CAPACITANCE
NOTES:
1. Tested initially and after any design or process changes that may effect these parameters.
AC TEST LOADS AND WAVEFORMS
DATA RETENTION CHARACTERISTICS
MT5C1008(LL)
Rev. 1.0 7/02
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Input Capacitance (A0 - A16)
Input Capacitance (CE\, WE\, OE\)
Output Capacitance
PARAMETER
PARAMETER
Austin Semiconductor, Inc.
1
CE1\ > Vcc - 0.3V or CE2 < 0.3V,
V
TA = 25°C, f = 1MHz,
IN
0.2V, Vcc = V
> Vcc - 0.3V or V
CONDITIONS
Vcc = 5.0V
CONDITIONS
4
DR
(-55
= 2.0V,
IN
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
o
C < T
< 0.3V
C
< 125
C
SYM
C
C
OUT
CLK
I
IN
SYM
CCDR
t
V
CDR
t
DR
R
o
C; V
Ultra Low Power
MT5C1008(LL)
CC
MIN
200
2.0
MAX
0
10
12
8
= 5.0V +10%)
MAX
150
SRAM
SRAM
SRAM
SRAM
SRAM
UNITS
pF
pF
pF
UNITS
µA
ns
µs
V

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