MT54W1MH36B Micron Technology, MT54W1MH36B Datasheet - Page 23

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MT54W1MH36B

Manufacturer Part Number
MT54W1MH36B
Description
SRAM 2-WORD BURST
Manufacturer
Micron Technology
Datasheet
TAP AC TEST CONDITIONS
TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
0ºC £ T
NOTE:
36Mb: 1.8V V
MT54W2MH18B_A.fm - Rev 9/02
1. 1All voltages referenced to Vss (GND).
2. Overshoot:
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns
Input timing reference levels . . . . . . . . . . . . . . . . . 0.9V
Output reference levels . . . . . . . . . . . . . . . . . . . . . . 0.9V
Test load termination supply voltage . . . . . . . . . . 0.9V
Undershoot: V
Power-up:
During normal operation, V
t
KHKL (MIN) or operate at frequencies exceeding
A
DD
£ +70ºC;
, HSTL, QDRIIb2 SRAM
V
V
IH
IL
IH
+1.7V £ V
(
(
AC
AC
£ V
) ³ -0.5V for t £
1
1
) £ V
1
1
DD
Q + 0.3V and V
DD
DD
DD
+ 0.7V for t £
1,2
1,2
Q must not exceed V
£ +1.9V unless otherwise noted
t
KHKH/2
DD
0V £ V
t
£ +1.7V and V
Output(s) disabled,
KHKH/2
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
0V £ V
CONDITIONS
I
I
OHC
I
OLC
I
OHT
IN
OLT
t
KF (MAX).
£ V
= -100µA
= 100µA
DD
SS
= -2mA
= 2mA
IN
. Control input signals (R#, W#, etc.) may not have pulse widths less than
DD
to 1.8V
£ V
DD
Q (DQx)
Q £ 1.4V for t £ 200ms
DD
23
SYMBOL
1.8V V
V
V
V
V
V
IL
V
IL
OH
OH
OL
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
IH
IL
O
I
1
2
1
1
TDO
DD
MIN
-0.3
-5.0
-5.0
1.3
1.6
1.4
, HSTL, QDRIIb2 SRAM
Z = 50
Figure 10
O
V
DD
MAX
0.5
5.0
5.0
0.2
0.4
+ 0.3
www.DataSheet4U.com
0.9V
UNITS
50
©2002, Micron Technology Inc.
µA
µA
20pF
V
V
V
V
V
V
ADVANCE
NOTES
1, 2
1, 2
1
1
1
1

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