MT2LDT832H Micron Technology, MT2LDT832H Datasheet - Page 11

• Manufacturer Part Number: MT2LDT832H
• Description: (MT2LDT432H / MT2LDT832H) SMALL-OUTLINE DRAM MODULE
• Manufacturer: Micron Technology

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DataSheet
4, 8 Meg x 32 DRAM SODIMMs
DM89.p65 – Rev. 12/98
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 19) (V
4
AC CHARACTERISTICS - EDO PAGE MODE OPTION
PARAMETER
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (4,096 cycles)
Refresh period “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
WRITE command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
U
.com
DD
= +3.3V ±0.3V)
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SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WCH
WCR
WHZ
t
WRH
RWL
WCS
WPZ
WRP
RCH
RRH
RCS
t
RPC
RSH
REF
REF
RPS
WP
RP
t
T
11
MIN
13
30
90
13
38
10
0
0
5
0
2
8
0
0
5
8
8
-5
MAX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128
64
50
12
MIN
105
40
15
15
10
45
10
10
10
0
0
5
0
2
0
0
5
-6
DRAM SODIMMs
MAX
128
64
50
15
4, 8 MEG x 32
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©1998, Micron Technology, Inc.
ADVANCE
NOTES
16
25
16
25
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