MT28F160A3 Micron Technology, MT28F160A3 Datasheet - Page 22

• Manufacturer Part Number: MT28F160A3
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
RECOMMENDED DC WRITE/ERASE CONDITIONS
(-40°C
WRITE/ERASE CURRENT DRAIN
(-40°C
WORD WRITE AND ERASE DURATION CHARACTERISTICS
NOTE: 1. Absolute WRITE/ERASE protection when V
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
4
PARAMETER/CONDITION
V
V
V
PARAMETER/CONDITION
WRITE CURRENT: V
ERASE CURRENT: V
ERASE/PROGRAM SUSPEND CURRENT: V
(ERASE/PROGRAM suspended)
PARAMETER
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Boot/parameter BLOCK WRITE time
Main BLOCK WRITE time
Program/erase suspend latency
U
PP
PP
CC
.com
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
WRITE/ERASE lockout operation
2. 5V V
3. Parameter is specified when device is not accessed. Actual current draw will be I
4. The 5V V
5. Typical values measured at T
6. Assumes no system overhead.
7. Typical write times tested with checkerboard data pattern.
T
T
operation, and 5V V
executed while the device is in suspend mode.
A
A
+85°C; V
+85°C; V
PP
is allowable for production programming only, not erasing. Write timings are identical to 2.7V–3.3V V
PP
is for programming only, not erasing.
CC
CC
CC
CC
+ V
+ V
= 2.7V–3.3V; V
= 2.7V–3.3V)
PP
PP
PP
SUPPLY
SUPPLY
programming current is not greater than I
A
= +25°C.
PP
= 2.7V–3.3V)
PP
SUPPLY
ENHANCED BOOT BLOCK FLASH MEMORY
PP
DataSheet4U.com
V
PPLK
.
22
SYMBOL
V
V
V
PPLK
PPH
LKO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PP 4
2.7V–3.3V V
TYP
.
0.5
1.0
0.1
0.3
SYMBOL
I
I
1
CC
CC
4 +
5 +
I
MIN
PP
2.7
–
–
6
I
I
2.7V–3.3V Vcc
PP
PP
MAX
4
5
4
5
–
3
–
PP
PP 6
TYP
TYP
2.0
1.5
50
plus current of operation being
–
–
–
TYP
0.1
0.3
–
1
–
5V V
MAX
MAX
200
3.3
PP
MAX UNITS NOTES
55
45
–
–
–
–
3
1 MEG x 16
–
–
©2001, Micron Technology, Inc.
UNITS NOTES
UNITS NOTES
ADVANCE
mA
mA
µA
V
V
V
µs
s
s
s
s
PP
5, 6, 7
5, 6, 7
4, 5
4, 5
1
2
2
3