S-8241 Seiko Instruments, S-8241 Datasheet - Page 11

• Manufacturer Part Number: S-8241
• Description: Battery Protection IC for 1-Cell Pack
• Manufacturer: Seiko Instruments

Rev.4.1
(4) Measurement Condition 4, Measurement Circuit 1
〈〈 Normal operation current consumption, Power-down current consumption, Overdischarge current
consumption 〉〉
(5) Measurement Condition 5, Measurement Circuit 1
〈〈 Internal resistance between VM and VDD, Internal resistance between VM and VSS 〉〉
(6) Measurement Condition 6, Measurement Circuit 1
〈〈 CO pin H resistance, CO pin L resistance 〉〉
(7) Measurement Condition 7, Measurement Circuit 1
〈〈 DO pin H resistance, DO pin L resistance 〉〉
(8) Measurement Condition 8, Measurement Circuit 1
Set V1=3.5 V and V2=0 V under normal condition. The current I
operation consumption current (I
• For products with power-down function
• For products without power-down function
Set V1=1.8 V and V2=0 V under overdischarge condition. Measure current I
1.8V/|I
Set V1=V2=3.5 V under overcurrent condition. Measure current I
gives the internal resistance (R
Set V1=3.5 V, V2=0 V and V3=3.0 V under normal condition. Measure current I
0.5 V/|I
Set V1=4.5 V, V2=0 V and V3=0.5 V under overcharge condition. Measure current I
pin. 0.5 V/|I
Set V1=3.5 V, V2=0 V and V4=3.0 V under normal condition. Measure current I
0.5V/|I
Set V1=1.8 V, V2=0 V and V4=0.5 V under overdischarge condition. Measure current I
DO pin. 0.5 V/|I
Set V1=3.5 V and V2=0 V under normal condition. Increase V1 gradually to overcharge detection voltage
V
The time after V1 becomes the overcharge detection voltage until V
delay time (t
Set V1=3.5 V and V2=0 V under normal condition. Decrease V1 gradually to overdischarge detection
voltage V
10 µs). The time after V1 becomes the overdischarge detection voltage V
overdischarge detection delay time (t
CU
Set V1=V2=1.5 V under overdischarge condition. The current I
power-down current consumption (I
Set V1=V2=1.5 V under overdischarge condition. The current I
overdischarge current consumption (I
〈〈 Overcharge detection delay time, Overdischarge detection delay time 〉〉
_01
- 0.2 V and increase V1 to the overcharge detection voltage V
VM
DO
CO
| gives the internal resistance (R
| gives the DO pin H resistance (R
| is the CO pin H resistance (R
DL
+ 0.2 V and decrease V1 to the overdischarge detection voltage V
CO
CU
| is the CO pin L resistance (R
).
DO
| gives the DO pin L resistance (R
VMS
OPE
) between VM and VSS.
).
DL
PDN
Seiko Instruments Inc.
).
OPED
COH
).
VMD
DOH
).
).
) between VM and VDD.
COL
BATTERY PROTECTION IC FOR 1-CELL PACK
).
).
DOL
).
DD
DD
DD
VM
CU
flowing through VDD pin is the normal
CO
flowing through VDD pin is the
flowing through VDD pin is the
flowing through VM pin. 3.5 V/|I
+ 0.2 V momentarily (within 10 µs).
goes "L" is the overcharge detection
DL
until V
VM
DL
flowing through VM pin.
CO
DO
- 0.2 V momentarily (within
flowing through CO pin.
flowing through DO pin.
DO
CO
goes "L" is the
flowing through CO
S-8241 Series
DO
flowing through
VM
|
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