PDTC114TT Philips Semiconductors, PDTC114TT Datasheet - Page 2

• Manufacturer Part Number: PDTC114TT
• Description: NPN resistor-equipped transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN resistor-equipped transistor in a
SOT23 plastic package.
PNP complement: PDTA114TT.
PINNING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 16
V
V
V
I
I
P
T
T
T
O
CM
SYMBOL
stg
j
amb
Built-in bias resistor R1 (typ. 10 k )
Simplification of circuit design
Reduces number of components
and board space.
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of an external resistor.
CBO
CEO
EBO
tot
NPN resistor-equipped transistor
PIN
1
2
3
base/input
emitter/ground
collector/output
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
DESCRIPTION
PARAMETER
handbook, 4 columns
Fig.2
MGA893 - 1
Equivalent inverter
symbol.
open emitter
open base
open collector
T
1
Top view
amb
Fig.1 Simplified outline (SOT23) and symbol.
2
25 C; note 1
2
1
CONDITIONS
3
3
2
MAM360
MARKING
Note
1.
PDTC114TT
NUMBER
1
65
65
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
MIN.
R1
Objective specification
50
50
5
100
100
250
+150
150
+150
PDTC114TT
MAX.
MARKING
CODE
3
2
V
V
V
mA
mA
mW
12
C
C
C
UNIT
(1)