PDTC114TE Philips Semiconductors, PDTC114TE Datasheet - Page 3

• Manufacturer Part Number: PDTC114TE
• Description: NPN resistor-equipped transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1998 Aug 03
V
V
V
I
I
P
T
T
T
R
I
I
I
h
V
R1
C
SYMBOL
SYMBOL
SYMBOL
O
CM
amb
CBO
CEO
EBO
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
th j-a
c
NPN resistor-equipped transistor
= 25 C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient note 1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
input resistor
collector capacitance
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
E
B
B
C
C
C
E
open emitter
open base
open collector
T
= 0; V
= 0; V
= 0; V
= 0; V
= 1 mA; V
= 10 mA; I
= i
amb
e
= 0; V
CB
CE
CE
EB
25 C; note 1
3
CONDITIONS
= 50 V
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
CE
B
= 0.5 mA
CONDITIONS
= 10 V; f = 1 MHz
= 5 V
j
= 150 C
200
7
MIN.
65
65
MIN.
VALUE
833
10
TYP.
50
50
5
100
100
150
+150
150
+150
PDTC114TE
Product specification
MAX.
100
1
50
100
150
13
2.5
MAX.
UNIT
K/W
V
V
V
mA
mA
mW
C
C
C
UNIT
nA
nA
mV
k
pF
UNIT
A
A