PDTA144 Philips Semiconductors, PDTA144 Datasheet - Page 3

no-image

PDTA144

Manufacturer Part Number
PDTA144
Description
PNP resistor-equipped transistor
Manufacturer
Philips Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDTA144EE
Manufacturer:
NXP
Quantity:
36 000
Part Number:
PDTA144EE
Manufacturer:
HIT
Quantity:
863
Part Number:
PDTA144EE
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PDTA144EEF
Manufacturer:
NXP
Quantity:
28 000
Part Number:
PDTA144EEF
Manufacturer:
FSC
Quantity:
262
Part Number:
PDTA144EK
Manufacturer:
NXP
Quantity:
51 000
Company:
Part Number:
PDTA144EK
Quantity:
18 000
Part Number:
PDTA144ET
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PDTA144ET
Quantity:
20 000
Part Number:
PDTA144ET,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PDTA144EU
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PDTA144TE
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1998 Jul 23
V
V
V
V
I
I
P
T
T
T
R
I
I
I
h
V
V
V
R1
R2
------ -
R1
C
SYMBOL
SYMBOL
SYMBOL
O
CM
amb
CBO
CEO
EBO
FE
stg
j
amb
CBO
CEO
EBO
I
tot
CEsat
i(off)
i(on)
th j-a
c
PNP resistor-equipped transistor
= 25 C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
positive
negative
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
C
B
B
C
C
C
C
C
E
= 0; V
= 0; V
= i
open emitter
open base
open collector
T
= 0; V
= 0; V
= 5 mA; V
= 10 mA; I
= 100 A; V
= 2 mA; V
amb
e
= 0; V
note 1
3
CE
CE
CB
EB
25 C; note 1
CONDITIONS
= 30 V
= 30 V; T
= 5 V
= 50 V
CB
CONDITIONS
CE
CE
B
CONDITIONS
= 10 V; f = 1 MHz
CE
= 0.5 mA
= 5 V
= 300 mV
= 5 V
j
= 150 C
80
33
0.8
MIN.
65
65
3
MIN.
VALUE
833
Preliminary specification
47
1
PDTA144EE
TYP.
1.2
1.6
+10
150
+150
150
+150
50
50
10
40
100
100
MAX.
61
1.2
3
MAX. UNIT
100
1
50
90
150
0.8
UNIT
K/W
V
V
V
V
V
mA
mA
mW
C
C
C
UNIT
nA
mV
V
V
k
pF
A
A
A

Related parts for PDTA144