T15V256A TM tech, T15V256A Datasheet - Page 5

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T15V256A

Manufacturer Part Number
T15V256A
Description
32K X 8 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
tm
AC CHARACTERISTICS
(
(1) READ CYCLE
* These parameters are measured with 5pF test load.
(2)WRITE CYCLE
* These parameters are measured with 5pF test load.
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Active from End of Write
V cc
=2.7V to 3.6V, Vss = 0V, Ta =
PARAMETER
PARAMETER
CH
TE
0 ~ +70 C
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
SYM.
SYM.
RC
A A
ACS
A OE
CLZ*
OLZ*
CHZ*
OHZ*
OH
W C
CW
A W
A S
W P
W R
DW
DH
WHZ*
OW
MIN
MIN
50
10
50
40
40
30
25
/-40 to 85 C)
7
5
0
0
0
5
-
-
-
-
-
-
-50ns
-50ns
MAX
MAX MIN. MAX. MIN. MAX. MIN. MAX.
50
50
25
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
P. 5
MIN. MAX.
70
10
10
70
60
60
50
30
5
0
0
0
5
-
-
-
-
-
-
-70ns
-70ns
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN. MAX. MIN. MAX.
85
10
10
85
70
70
60
35
5
0
0
0
5
-
-
-
-
-
-
Publication Date: SEP. 2001
-85ns
-85ns
85
85
40
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
100
100
10
10
80
80
70
40
5
0
0
0
5
-
-
-
-
-
-
T15V256A
-100ns
-100ns
100
100
50
30
30
30
Revision:A
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
UNI
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T

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