T15N1M16A TM tech, T15N1M16A Datasheet - Page 3

• Manufacturer Part Number: T15N1M16A
• Description: 64K X 16 LOW POWER CMOS STATIC RAM
• Manufacturer: TM tech

ABSOLUTE MAXIMUM RATINGS*
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
TRUTH TABLE
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 C to +70 C / -40 C ~ +85 C *)
*
TM Technology Inc. reserves the right
to change products or specifications without notice.
Voltage on Any Pin Relative to VSS
Power Dissipation
Storage Temperature
Temperature Under Bias
Supply Voltage
Input Voltage
CE
X*
H
L
L
L
L
L
L
L
L
V
IL
PARAMETER
the device.
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
min = -1.0V for pulse width less than
OE
X*
X*
X*
X*
X*
H
H
L
L
L
PARAMETER
CH
TE
WE
X*
X*
H
H
H
H
H
L
L
L
This is a stress rating only and function operation of the device at these or any other
LB
X*
X*
H
H
H
L
L
L
L
L
UB
X*
X*
H
H
H
L
L
L
L
L
SYM
Vcc
V
V
V
SS
IH
IL
Data Out
Data Out
I/O 1~8
High-Z
Data In
Data In
High-Z
High-Z
High-Z
High-Z
High-Z
t
SYM
T
RC
I
BIAS
V
P
STG
D
/2
R
-0.5*
MIN
2.4
0.0
2.0
P. 3
I/O 9~16
Data Out
Data Out
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data In
Data In
0 / -40
MIN.
-0.5
-55
-
TYP
0.0
-
-
-
Lower Byte Write
Upper Byte Write
Lower Byte Read
Upper Byte Read
Output Disabled
Output Disabled
Word Write
Word Read
Deselected
Deselected
+70 / +85
MODE
+4.6 V
MAX.
+150
Publication Date: JUL . 2002
0.7
Vcc+0.3
MAX
3.6
0.0
0.4
T15N1M16A
UNIT
Standby
Standby
Revision: A
Power
Active
Active
Active
Active
Active
Active
Active
Active
UNIT
W
V
C
C
V
V
V
V