ND2406L ETC, ND2406L Datasheet - Page 2

• Manufacturer Part Number: ND2406L
• Description: N-channel Depletion-mode Mosfet Transistors
• Manufacturer: ETC

Notes
a.
b.
c.
d.
ND2406L/2410L, BSS129
2
Specifications
Static
D i S
Drain-Source
Breakdown Voltage
Gate Source Cutoff Voltage
Gate-Source Cutoff Voltage
Gate Body Leakage
Gate-Body Leakage
Drain Cutoff Current
Drain Cutoff Current
Drain-Saturation Current
Drain Source On Resistance
Drain-Source On-Resistance
Forward Transconductance
Forward Transconductance
Common Source
Output Conductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn On Time
Turn-On Time
Turn-Off Time
Turn-Off Time
T
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
Switching time is essentially independent of operating temperature.
A
= 25 C unless otherwise noted.
Parameter
d
g
c
300 s duty cycle
c
c
c
c
c
a
V
Symbol
V
V
r
r
(BR)DSV
I
I
t
DS( )
DS(on)
t
I
I
I
GS( ff)
GS(off)
D( ff)
D(off)
C
C
C
d(off)
d(on)
g
GSS
GSS
DSS
g
g
t
t
oss
os
rss
f
fs
iss
r
f
2%.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
V
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
Test Conditions
DS
30
30
= 0 V, V
= 180 V, V
= 180 V, V
= 230 V, V
= 25 V, I
= –3 V, I
= 25 V, V
= –9 V, I
= –5 V, I
= 10 V, V
= 2 V, I
= 0 V, I
= 0 V, I
= 5 V, I
= 10 V, I
= 3 V, I
25 V V
25
f = 1 MHz
GS
D
D
D
D
D
D
D
D
D
GS
D
= 30 mA
= 30 mA
= 14 mA
= 250 mA
GS
GS
GS
GS
= 250 A
= 10 A
= 1 mA
=
= 10 A
= 10 A
= 30 A
=
=
=
=
=
= –5 V
= –9 V
= –5 V
= –3 V
= 0 V
20 V
5 V
Typ
260
260
260
350
375
100
110
3.3
4.5
7.2
70
70
20
10
15
75
40
4
b
Min
–1.5
240
40
ND2406L
Max
–4.5
200
120
15
30
15
1
6
10
50
Min
–0.5
240
40
S-52426—Rev. C, 14-Apr-97
ND2410L
Limits
Max
–2.5
200
120
10
25
30
15
1
10
50
Min
–0.7
230
140
BSS129
Max Unit
200
0.1
20
100
Siliconix
VDDV24
mA
mS
mS
nA
nA
pF
ns
ns
V
A
A
S