1PS59SB10 Philips Semiconductors (Acquired by NXP), 1PS59SB10 Datasheet - Page 3

• Manufacturer Part Number: 1PS59SB10
• Description: 1PS59SB10 Series; Schottky Barrier (double) Diodes;; Package: SOT346 (SMT3, MPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SC59 standard mounting conditions.
1996 Sep 20
Per diode
V
I
I
I
P
T
T
Per diode
V
I
t
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
rr
stg
j
R
tot
F
d
th j-a
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
t
t
T
see Fig.6
V
when switched from I
to I
measured at I
see Fig.9
f = 1 MHz; V
note 1
3
p
p
amb
R
< 10 ms
I
I
I
I
I
F
F
F
F
F
R
= 25 V; see Fig.7
1 s;
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 10 mA; R
25 C
CONDITIONS
CONDITIONS
CONDITIONS
0.5
R
R
= 1 V; see Fig.8
= 1 mA;
L
= 100 ;
F
= 10 mA
1PS59SB10 series
240
320
400
500
800
2
5
10
MIN.
65
VALUE
MAX.
500
Product specification
30
200
300
600
250
+150
125
MAX.
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT