BA779 Vishay Intertechnology, BA779 Datasheet - Page 2

• Manufacturer Part Number: BA779
• Description: RF Pin Diodes
• Manufacturer: Vishay Intertechnology

Electrical Characteristics
T
Characteristics (T
BA779.BA779S
Vishay Semiconductors
Forward voltage
Reverse current
Diode capacitance
Differential forward
resistance
Reverse impedance
Reverse impedance
Minority carrier lifetime I
www.vishay.com
2 (4)
j
= 25 _ C
95 9735
95 9734
Figure 1. Forward Current vs. Forward Voltage
10000
1000
Figure 2. Differential Forward Resistance vs.
0.01
100
100
Parameter
0.1
10
10
1
1
0.001
0
T
amb
f >20 MHz
0.4
T
= 25 C
j
0.01
= 25 C
I
V
F
Forward Current
F
– Forward Current ( mA )
– Forward Voltage ( V )
0.8
Scattering Limit
I
V
f=100MHz, V
f=100MHz, I
f=100MHz V
f=100MHz, V
F
F
0.1
R
=20mA
=10mA, I
j
=30 V
= 25 _ C unless otherwise specified)
1.2
Test Conditions
1
R
1.6
=10mA
F
R
R
R
=1.5mA
=0
=0
=0
2.0
10
95 9733
BA779S
BA779
Type
Figure 3. Typ. Cross Modulation Distortion vs.
–20
–40
–60
–80
20
0
0
f
2
, modulated with 200 kHz, m=100% (MHz)
Symbol
P
C
–Circuit with 10 dB Attenuation
V
20
I
z
z
f
r
t
R
1
f
F
D
r
r
= 100 MHz unmodulated
Frequency f
V
0
= 40 dB mV
Min
40
5
9
2
Document Number 85532
Typ
4
60
Rev. 4, 13-Feb-01
Max
0.5
50
50
1
80
Unit
nA
k
k
pF
m
W
V
W
W
s