BAQ800 Philips Semiconductors (Acquired by NXP), BAQ800 Datasheet - Page 3

• Manufacturer Part Number: BAQ800
• Description: BAQ800; Am Pin Diode
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
of this product.
THERMAL CHARACTERISTICS
All characteristics must be tested in the dark because of the light sensitivity of this product.
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.17.
1997 Aug 26
V
I
C
r
r
R
R
SYMBOL
SYMBOL
j
R
D
s
F
= 25 C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity
d
th j-tp
th j-a
AM PIN diode
For more information please refer to the “General Part of Handbook SC01” .
forward voltage
reverse current
charge carrier life time
diode capacitance
diode forward resistance
diode series resistance
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
I
I
see Figs 4 and 5
V
V
when switched from I
I
see Fig.15
f = 1 MHz; see Figs 6, 7, 8 and 9
f = 100 kHz; see Figs 10 and 16
f = 100 kHz; see Figs 11, 12 and 13
F
F
R
f = 1 MHz; see Figs 11, 12 and 13
R
R
V
V
I
I
I
V
V
V
V
= 100 mA; see Figs 4 and 5
= 100 mA; T
I
= 6 mA; measured at 10% of I
F
F
F
F
= 100 V; see Fig.14
= 100 V; T
R
R
R
R
R
R
= 10 A
= 100 A
= 1 mA
= 10 mA
= 0
= 2 V
= 0
= 2 V
= 0
= 2 V
CONDITIONS
j
j
= 125 C; see Fig.14
= T
3
j max
lead length = 10 mm
note 1
F
= 10 mA to
;
CONDITIONS
R
;
1000
5000
MIN.
100
10
25
11000
TYP.
3100
2200
0.9
0.7
380
220
20
10
42
50
5
5
Product specification
VALUE
MAX.
6000
120
1.1
0.9
0.1
30
800
60
BAQ800
12
80
10
6
V
V
pF
pF
k
k
k
k
A
A
s
UNIT
UNIT
K/W
K/W