2N3506AL Semicoa Semiconductors, 2N3506AL Datasheet - Page 2

• Manufacturer Part Number: 2N3506AL
• Description: Package = TO-5 ;; Level = Jans ;; Vceo (V) = 40 ;; Vcbo (V) = 60 ;; Vebo (V) = 5.0 ;; Ic (A) = 3.00 ;; Power (W) ta = 1 ;; Rtja ( C/W) = 175 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 200 ;; VCE(sat) (V) = 1.00
• Manufacturer: Semicoa Semiconductors

Copyright 2002
Rev. E
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Delay Time
Rise Time
Switching Characteristics
Storage Time
Fall Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
V
V
V
V
V
(BR)CBO
I
I
C
(BR)CEO
(BR)EBO
C
h
h
h
h
h
|h
CEX1
CEX2
BEsat1
BEsat2
BEsat3
CEsat1
CEsat2
CEsat3
OBO
FE1
FE2
FE3
FE4
FE5
t
t
t
t
IBO
FE
d
r
s
f
Semicoa Semiconductors, Inc.
|
www.SEMICOA.com
I
I
I
V
V
T
I
I
I
I
I
T
I
I
I
I
I
I
V
f = 20 MHz
V
100 kHZ < f < 1 MHz
V
100 kHZ < f < 1 MHz
I
I
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
A
A
CE
CE
CE
CB
EB
= 10 µA
= 100 µA
= 10 mA
= 500 mA, V
= 1.5 A, V
= 2.5 A, V
= 3.0 A, V
= 500 mA, V
= 500 mA, I
= 1.5 A, I
= 2.5 A, I
= 500 mA, I
= 1.5 A, I
= 2.5 A, I
= 1.5 A, I
= 1.5 A, I
= 1.5 A, I
= 1.5 A, I
= 150°C
= -55°C
= 40 Volts, V
= 40 Volts, V
= 5 Volts, I
= 3 Volts, I
= 10 Volts, I
Test Conditions
Test Conditions
Test Conditions
B
B
B
B
B1
B1
B1
B1
CE
CE
CE
= 150 mA
= 250 mA
= 150 mA
= 250 mA
=I
=I
= 150 mA
= 150 mA
B
B
CE
CE
= 2 Volts
= 3 Volts
= 5 Volts
C
C
B2
B2
= 50 mA
= 50 mA
E
= 100 mA,
= 0 mA,
EB
EB
= 1 Volts
= 2 Volts
= 0 mA,
= 150 mA
= 150 mA
= 4 Volts,
= 4 Volts
Min
Min
Min
0.8
60
40
50
40
30
25
25
5
3
characteristics specified at T
2N3506AL
Silicon NPN Transistor
Typ
Typ
Typ
Max
Max
Max
250
200
300
1.5
0.5
1.0
1.5
1.0
1.3
2.0
15
40
15
30
55
35
D a t a S h e e t
1
Page 2 of 2
A
Units
Units
Units
Volts
Volts
Volts
Volts
Volts
= 25°C
mA
µA
pF
pF
ns
ns
ns
ns