NST45010 ON Semiconductor, NST45010 Datasheet

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NST45010

Manufacturer Part Number
NST45010
Description
Manufacturer
ON Semiconductor
Datasheet

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Price
Part Number:
NST45010MW6T1G
Manufacturer:
ON Semiconductor
Quantity:
1 850
Part Number:
NST45010MW6T1G
Manufacturer:
ON
Quantity:
30 000
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Part Number:
NST45010MW6T1G
Quantity:
21 000
NST45010MW6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Complementary NPN equivalent NST45011MW6T1G is available.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
Thermal Resistance,
Junction and Storage
These transistors are housed in an ultra−small SOT−363 package
Current Gain Matching to 10%
Base−Emitter Voltage Matched to ≤ 2 mV
Drop−In Replacement for Standard Device
These are Pb−Free Devices
Per Device
FR−5 Board (Note 1)
T
Derate Above 25°C
Junction to Ambient
Temperature Range
A
= 25°C
Characteristic
Rating
Symbol
T
R
J
P
, T
qJA
D
stg
Symbol
V
V
V
CEO
CBO
EBO
I
C
−55 to +150
Max
380
250
328
3.0
Value
−100
−5.0
−45
−50
1
mW/°C
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
†For information on tape and reel specifications,
NST45010MW6T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
Q
(3)
(4)
ORDERING INFORMATION
1
MARKING DIAGRAMS
4F
M
G
http://onsemi.com
= Device Code
= Date Code
= Pb−Free Package
CASE 419B
SOT−363
STYLE 1
6
(Pb−Free)
SOT−363
4F MG
Package
(5)
Publication Order Number:
G
(2)
1
NST45010MW6/D
3000/Tape & Reel
Shipping
(1)
(6)
Q
2

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NST45010 Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NST45010MW6T1G SOT−363 3000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST45010MW6/D 2 † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage, (I Collector −Emitter Breakdown Voltage, (I Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage −1.0 mA) E Collector Cutoff Current (V = − Collector Cutoff ...

Page 3

V = - 25°C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain -2.0 -1.6 -1 ...

Page 4

T = 25° 25° 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 1.0 5 COLLECTOR-EMITTER VOLTAGE (V) CE Figure 7. Active Region Safe Operating Area ...

Page 5

... BSC 0.026 BSC 0.10 0.20 0.30 0.004 0.008 0.012 2.00 2.10 2.20 0.078 0.082 0.086 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NST45010MW6/D ...

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