BFS520 Philips Semiconductors (Acquired by NXP), BFS520 Datasheet - Page 2

• Manufacturer Part Number: BFS520
• Description: BFS520; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
CBO
CES
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
T
C
C
c
c
amb
amb
amb
BE
= 20 mA; V
= 5 mA; V
= 20 mA; V
= 20 mA; V
base
emitter
collector
= 0
open emitter
R
open collector
up to T
= 25 C
= 25 C
= 25 C
BE
s
Code: N2
= 118 C; note 1
DESCRIPTION
= 0
CONDITIONS
2
CE
s
CE
= 118 C; note 1
CE
CE
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
CONDITIONS
= 6 V; T
= 6 V; f = 1 GHz;
j
= 25 C
handbook, 2 columns
60
MIN.
Top view
Fig.1 SOT323.
65
MIN.
120
9
15
1.1
TYP.
Product specification
1
20
15
2.5
70
300
150
175
MAX.
3
20
15
70
300
250
1.6
MAX.
BFS520
MBC870
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT