RN2113FT Toshiba America Electronic Components, Inc., RN2113FT Datasheet - Page 2

• Manufacturer Part Number: RN2113FT
• Description: Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) (bias Resistor Built-in Transistor)
• Manufacturer: Toshiba America Electronic Components, Inc.

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Type Name
RN1112FT
RN1113FT
Characteristics
RN2112FT
RN2113FT
(Ta = = = = 25°C)
Y N
Y P
Marking
V
Symbol
CE (sat)
I
I
CBO
h
C
EBO
R1
f
FE
T
ob
Type name
Type name
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= -5 mA, I
2
= -5 V, I
= -50 V, I
= -5 V, I
= -10 V, I
= -10 V, I
Test Condition
B
C
C
E
E
C
= -0.25 mA
= 0
= -1 mA
= 0
= -5 mA
= 0, f = 1 MHz
¾
RN2112FT,RN2113FT
15.4
32.9
120
Min
¾
¾
¾
¾
¾
Typ.
-0.1
200
22
47
¾
¾
¾
3
2002-01-24
-100
-100
Max
-0.3
28.6
61.1
400
¾
6
MHz
Unit
kW
nA
nA
pF
V