2SB554 Quanzhou Jinmei Electronic, 2SB554 Datasheet
2SB554
Manufacturer Part Number
2SB554
Description
Silicon PNP Power Transistors
Manufacturer
Quanzhou Jinmei Electronic
Datasheet
1.2SB554.pdf
(3 pages)
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SD424
・High power dissipation
APPLICATIONS
・For use in power amplifier applications
PINNING(see Fig.2)
Absolute maximum ratings(Ta=
JMnic
SYMBOL
V
V
V
PIN
T
P
CBO
CEO
EBO
I
I
T
1
2
3
C
stg
B
C
j
Base
Emitter
Collector
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
Open emitter
Open base
Open collector
T
C
=25℃
CONDITIONS
Fig.1 simplified outline (TO-3) and symbol
Product Specification
-55~200
VALUE
-180
-180
150
150
-15
-5
-4
2SB554
UNIT
W
℃
℃
V
V
V
A
A
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2SB554 Summary of contents
Page 1
... B P Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SB554 VALUE UNIT -180 V -180 - 150 W ℃ 150 ℃ -55~200 ...
Page 2
... CONDITIONS I =-25mA ; =-10A =-90V =- =-10V;f=1.0MHz =- =- Product Specification 2SB554 MIN TYP. MAX UNIT -180 V -3.0 V -1.5 V -0 140 450 pF 6 MHz ...
Page 3
... JMnic Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Product Specification 3 2SB554 ...