BC817-16E6327 Infineon Technologies Corporation, BC817-16E6327 Datasheet - Page 2

• Manufacturer Part Number: BC817-16E6327
• Description: NPN Silicon af Transistor
• Manufacturer: Infineon Technologies Corporation

1) Pulse test: t
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
Emitter cutoff current
V
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter saturation voltage 1)
I
Collector-base breakdown voltage
I
DC current gain 1)
I
C
E
C
C
C
C
C
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 100 mA, V
= 500 mA, I
= 500 mA, I
= 10 µA, I
= 300 mA, V
= 4 V, I
= 25 V, I
= 25 V, I
C
C
E
B
E
E
300 s, D = 2%
= 0
= 0
B
B
= 0
= 0
CE
= 0
= 0 , T
CE
= 50 mA
= 50 mA
= 1 V
= 1 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
BC817
BC818
BC817
BC818
h
h
h
h
h
h
FE
FE
FE
FE
FE
FE
-grp. 16
-grp. 25
-grp. 40
-grp. 16
-grp. 25
-grp. 40
2
Symbol
V
V
V
I
I
I
h
V
V
h
CBO
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
FE
CEsat
BEsat
min.
100
170
100
160
250
60
45
25
50
30
5
-
-
-
-
-
Values
typ.
160
250
350
-
-
-
-
-
-
-
-
-
-
-
-
-
BC817, BC818
max.
Nov-29-2001
100
100
250
400
630
0.7
1.2
50
-
-
-
-
-
-
-
-
Unit
-
V
nA
µA
nA
V