BC807-16W Infineon Technologies Corporation, BC807-16W Datasheet
BC807-16W
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BC807-16W Summary of contents
Page 1
... PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) Type Marking 5As BC807-16W 5Bs BC807-25W 5Cs BC807-40W 5Es BC808-16W 5Fs BC808-25W 5Gs BC808-40W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage ...
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... A Symbol V (BR)CEO BC807W BC808W V (BR)CBO BC807W BC808W V (BR)EBO I CBO I CBO I EBO -grp -grp -grp CEsat V BEsat 2 BC807W, BC808W Values Unit min. typ. max 100 µ 100 nA - 100 160 ...
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... Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance MHz EB = 25°C, unless otherwise specified. A Symbol BC807W, BC808W Values Unit min. typ. max. - 200 - MHz - Nov-29-2001 ...
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... T S Collector cutoff current 25V CBO BC807W, BC808W = f (t thJS 0.5 0.2 0.1 0.05 0.02 0 0.01 0.005 f(T CBO max typ 0 50 100 Nov-29-2001 ...
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... C Collector-emitter saturation voltage EHP00214 3.0 V 4.0 V BEsat 5 BC807W, BC808W = CEsat FE 150 ˚C 25 ˚C -50 ˚C 0 0.2 0.4 Nov-29-2001 EHP00210 EHP00215 0.6 V 0.8 V CEsat ...