2N7222 International Rectifier Corp., 2N7222 Datasheet - Page 2

• Manufacturer Part Number: 2N7222
• Description: up to 28A N-channel Enhancement Mode MOSFET Power Transistor
• Manufacturer: International Rectifier Corp.

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
IRFM440
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
R thCS
R thJA
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
—
Min Typ Max Units
—
—
—
—
—
Min
500
2.0
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.21
—
—
—
—
—
—
—
1300
Typ Max Units
0.78
310
120
1.0
6.8
48
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
700
8.0
1.5
8.9
32
0.85
0.95
-100
68.5
12.5
42.4
250
100
°C/W
4.0
25
21
73
72
51
—
—
—
—
—
—
—
nS
µC
A
V
V/°C
S ( )
nH
nA
nC
ns
pF
V
V
A
T j = 25°C, I F = 8.0A, di/dt
T
j
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
= 25°C, I S = 8.0A, V GS = 0V
Reference to 25°C, I D = 1.0mA
Typical socket mount
V DS > 15V, I DS = 5.0A
V DS = V GS , I D = 250µA
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V DD = 250V, I D = 8.0A,
V GS =10V, R G = 9.1
V GS = 0V, V DS = 25V
V GS = 10V, I D = 5.0A
V GS = 10V, I D = 8.0A
V DS = 400V ,V GS =0V
V GS =10V, I D = 8.0A
Test Conditions
V DD
V DS = 400V,
V GS = -20V
V DS =250V
V GS = 20V
f = 1.0MHz
50V
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100A/ s