2N7000RLRM ON Semiconductor, 2N7000RLRM Datasheet - Page 2

• Manufacturer Part Number: 2N7000RLRM
• Description: Small Signal MOSFET 200 Mamps, 60 Volts , Package: TO-92 (TO-226), Pins=3
• Manufacturer: ON Semiconductor

1. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate Threshold Voltage
Static Drain–Source On–Resistance
Drain–Source On–Voltage
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Turn–On Delay Time
Turn–Off Delay Time
(V GS = 0, I D = 10 Adc)
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 C)
(V GSF = 15 Vdc, V DS = 0)
(V DS = V GS , I D = 1.0 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 4.5 Vdc, V DS = 10 Vdc)
(V DS = 10 Vdc, I D = 200 mAdc)
Capacitance
300 s, Duty Cycle
(Note 1.)
Characteristic
R G = 25 W, R L = 30 W, V gen = 10 V)
(Note 1.)
(V DD = 15 V, I D = 500 mA,
(V DD
(T C = 25 C unless otherwise noted)
(V DS = 25 V, V GS = 0,
( DS
f
f = 1.0 MHz)
15 V, I D
2.0%.
1 0 MH )
, GS
http://onsemi.com
500 mA,
2N7000
,
2
V (BR)DSS
V DS(on)
Symbol
V GS(th)
r DS(on)
I GSSF
I d(on)
I DSS
C oss
C rss
C iss
g fs
t on
t off
Min
100
0.8
60
75
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.45
–10
1.0
1.0
3.0
5.0
6.0
2.5
5.0
60
25
10
10
–
–
–
mAdc
mAdc
nAdc
Ohm
Unit
mhos
Vdc
Vdc
Vdc
Adc
pF
ns