2SD602 Panasonic Industrial Company/Electronic Components, 2SD602 Datasheet
2SD602
Manufacturer Part Number
2SD602
Description
Silicon NPN Epitaxial Planer Type
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet
1.2SD602.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD602A-Q(TX)
Manufacturer:
RENESAS
Quantity:
454
Part Number:
2SD602A-Q(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD602A-R
Manufacturer:
RENESAS
Quantity:
3 000
Part Number:
2SD602A-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD602A-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD602A-S(TX)
Manufacturer:
PANASONIC
Quantity:
6 228
Part Number:
2SD602A/X
Manufacturer:
PANA
Quantity:
20 000
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB710 and 2SB710A
*1
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Marking
Symbol
h
FE1
Features
Low collector to emitter saturation voltage V
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Parameter
Rank
h
Parameter
FE1
2SD602
2SD602A
2SD602
2SD602A
2SD602
2SD602A
2SD602
2SD602A
2SD602
2SD602A
85 ~ 170
Symbol
WQ
XQ
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
V
V
V
h
h
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
ob
*1
(Ta=25˚C)
120 ~ 240
–55 ~ +150
WR
XR
Ratings
R
500
200
150
30
60
25
50
5
1
V
I
I
I
V
V
I
V
V
CE(sat)
C
C
E
C
CB
CB
CE
CE
CB
= 10 A, I
= 10mA, I
= 10 A, I
= 300mA, I
= 10V, I
= 10V, I
= 10V, I
170 ~ 340
= 20V, I
= 10V, I
.
WS
XS
S
Unit
mW
C
mA
Conditions
E
E
C
C
˚C
˚C
E
E
B
V
V
V
A
= –50mA
= 0
= 0
B
= 0
= 150mA
= 500mA
= 0, f = 1MHz
= 0
= 30mA
*2
*2
*2
*2
, f = 200MHz
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
30
60
25
50
85
40
5
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
0.35
160
200
W
X
typ
2.8
1.5
6
(2SD602A)
+0.2
–0.3
+0.25
–0.05
(2SD602)
*2
Pulse measurement
max
340
0.1
0.6
15
3
0.65 0.15
Unit: mm
MHz
Unit
pF
V
V
V
V
A
1
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Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW ) = 0.047 ;; Package = SMini5-F1
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Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package = SMini5-F1SMini5-G1
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2SD602 Summary of contents
Page 1
... Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Features Low collector to emitter saturation voltage V Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings ...
Page 2
... A ) Collector current — f=1MHz Ta=25˚ 100 ( V ) Collector to base voltage V CB 2SD602, 2SD602A I — 800 V =10V CE Ta=25˚C 700 600 500 400 300 200 100 Base current — ...