2SD414 NEC Electronics Inc., 2SD414 Datasheet

2SD414

Manufacturer Part Number

2SD414

Description

Pnp/npn Silicon Epitaxial Transistor FOR Low-frequency Power Amplifiers

Manufacturer

NEC Electronics Inc.

Datasheet

1.2SD414.pdf (4 pages)

Available stocks

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Part Number

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Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SD414

Manufacturer:

NEC

Quantity:

20 000

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Document No. D16141EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

FEATURES

• Ideal for audio amplifier drivers with 30 W to 50 W output

• High voltage

• Available for small mount spaces due to small and thin package

• Easy to be attached to radiators

ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Collector cutoff current

Emitter cutoff current

DC current gain

Collector saturation voltage

Base saturation voltage

Gain bandwidth product

Collector capacitance

FE2

Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%

Marking

CLASSIFICATION

FE2

Parameter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

40 to 80

FOR LOW-FREQUENCY POWER AMPLIFIERS

PNP/NPN SILICON EPITAXIAL TRANSISTOR

Symbol

60 to 120

(Ta = 25°C)

(Tc = 25°C)

Symbol

CE(sat)

BE(sat)

CBO

EBO

FE1

FE2

C(pulse)

C(DC)

CBO

CEO

EBO

stg

2SB548, 549/2SD414, 415

= −500/500 mA, I

= −80/80 V, I

= −3.0/3.0 V, I

= −5.0/5.0 V, I

= −10/10 V, I

2SB548/

2SD414

100 to 200

−80/80

−55 to +150

−100/120

−5.0/5.0

−0.8/0.8

−1.5/1.5

150

1.0

DATA SHEET

−100/100

2SB549/

2SD415

Conditions

= 0

= 0, f = 1.0 MHz

= 0

= −2.0/2.0 mA*

= −200/200 mA*

= −100/100 mA

160 to 320

= −50/50 mA*

Unit

°C

SILICON POWER TRANSISTOR

PACKAGE DRAWING (UNIT: mm)

MIN.

Electrode Connection

−0.4/0.3

−0.9/0.9

70/45

25/15

TYP.

−1.0/1.0

−2.0/2.0

−1.5/1.5

MAX.

320

MHz

Unit

µ A

1998

2002

Related parts for 2SD414

2SD414 Summary of contents

Page 1

... PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25° ...

Page 2

... Case Temperature Tc (°C) Note ° Derate the dissipation limited area by case temperature and duty cycle. 3. S/b limited area is a single pulse. Derate this area by (V) Collector to Emitter Voltage V CE Collector to Emitter Voltage V Data Sheet D16141EJ2V0DS 2SB548, 549/2SD414, 415 (V) CE (V) CE ...

Page 3

... WR (PLWWHU 9ROWDJH 9 9 &( &ROOHFWRU &XUUHQW , $ & &ROOHFWRU WR %DVH 9ROWDJH 9 9 &% Data Sheet D16141EJ2V0DS 2SB548, 549/2SD414, 415 &ROOHFWRU &XUUHQW , $ & :LWK KHDWVLQN IRUFHG DLU FRROLQJ &ROOHFWRU &XUUHQW , $ & 3 ...

Page 4

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SB548, 549/2SD414, 415 Please check with an NEC sales representative for The M8E 00. 4 ...

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