BSP318 Infineon Technologies Corporation, BSP318 Datasheet

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BSP318

Manufacturer Part Number
BSP318
Description
Sipmos(r) Small-signal Transistor: 60v, 2.6a
Manufacturer
Infineon Technologies Corporation
Datasheet

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SIPMOS
Features
Type
BSP318S
Maximum Ratings,at T
Parameter
Continuous drain current
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
jmax
A
N-Channel
Avalanche rated
Logic Level
d v /d t rated
= 2.6 A, V
= 2.6 A, V
= 25 °C
= 25 °C
= 150 °C
DS
DD
Small-Signal-Transistor
= 20 V, d i /d t = 200 A/µs,
= 25 V, R
Package
SOT-223
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
Ordering Code
Q67000-S4002
jmax
jmax
Final data
Page 1
Symbol
I
I
E
I
E
d v /d t
V
P
T
D
D puls
AR
j ,
AS
AR
GS
tot
T
stg
Pin 1
-55... +150
55/150/56
G
V
I
Value
D
10.4
0.18
DS
DS(on)
2.6
2.6
1.8
60
20
6
4
Pin 2, 4
D
1999-10-28
BSP318S
0.09
2.6
60
1
PIN 3
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
2
VPS05163
S
V
A
3

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BSP318 Summary of contents

Page 1

... Drain source voltage Drain-Source on-state resistance R Continuous drain current Ordering Code Q67000-S4002 Symbol puls jmax AR E jmax tot Page 1 BSP318S 0.09 DS(on Pin 1 Pin Value 2.6 10.4 60 2.6 0. 1.8 -55... +150 stg 55/150/56 1999-10-28 V ...

Page 2

... Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Final data Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 °C = 150 °C I GSS R DS(on) R DS(on) Page 2 BSP318S Values Unit min. typ. max K/W - 100 - - - 70 Values Unit min. typ. max 1.2 1.6 2 µ ...

Page 3

... 4 Final data = 25 °C, unless otherwise specified j Symbol 2 d(on d(off Page 3 Values min. typ. max. 2.4 5.5 - 300 iss - 90 oss - 50 rss - BSP318S Unit - S 380 pF 120 1999-10-28 ...

Page 4

... A/µ Final data = 25 °C, unless otherwise specified j Symbol Q G(th (plateau) Symbol Page 4 BSP318S Values Unit min. typ. max. - 0 Values Unit min. typ. max 2 ...

Page 5

... K 140.0µ Page BSP318S 100 120 = BSP318S single pulse - 1999-10-28 BSP318S °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 6

... V 5 Gate threshold voltage V GS(th) parameter 4.5 V 3.0 V 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 °C 100 180 - Page 6 BSP318S DS(on)max = 80 µ µ 140 °C - 100 1999-10- max typ min ...

Page 7

... °C 120 160 T j Page µs p BSP318S °C typ 150 °C typ °C (98 150 °C (98 0.0 0.4 0.8 1.2 1.6 2.0 ) Gate = 2.6 A pulsed D BSP318S 8 0,2 V 0,8 DS max 1999-10-28 BSP318S V 2.4 3 max Gate ...

Page 8

... Drain-source breakdown voltage (BR)DSS j BSP318S -60 - Final data °C 100 180 T j Page 8 BSP318S 1999-10-28 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Final data Page 9 BSP318S 1999-10-28 ...

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