BSP308 Infineon Technologies Corporation, BSP308 Datasheet

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BSP308

Manufacturer Part Number
BSP308
Description
Sipmos(r) Small-signal-transistor: 30v, 4.7a
Manufacturer
Infineon Technologies Corporation
Datasheet
SIPMOS
Features
Type
BSP308
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
Enhancement mode
A
A
A
jmax
A
N-Channel
Logic Level
d v /d t rated
= 4.7 A, V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
DS
Small-Signal-Transistor
= 20 V, d i /d t = 200 A/µs,
Package
SOT-223
j
= 25 °C, unless otherwise specified
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
Ordering Code
Q67000-S4011
Preliminary data
Page 1
Symbol
I
I
d v /d t
V
P
T
D
D puls
j ,
GS
tot
T
stg
Pin 1
-55...+150
55/150/56
G
V
I
Value
D
18.8
DS
±20
DS(on)
4.7
3.9
1.8
6
4
Pin 2/4
D
1999-09-22
0.05
4.7
30
BSP308
1
PIN 3
Unit
A
kV/µs
V
W
°C
2
VPS05163
S
V
A
3

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BSP308 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Preliminary data Product Summary Drain source voltage Drain-Source on-state resistance R Continuous drain current Ordering Code Q67000-S4011 Symbol puls tot stg Page 1 BSP308 0.05 DS(on VPS05163 Pin 1 Pin 2/4 PIN Value ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Preliminary data Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 °C = 125 °C I GSS R DS(on) R DS(on) Page 2 BSP308 Values Unit min. typ. max K/W K 110 - - 70 Values Unit min. typ. max 1.2 1.6 2 µ ...

Page 3

... Preliminary data = 25 °C, unless otherwise specified j Symbol 3 d(on d(off Page 3 Values min. typ. max. 6.1 8.8 - 400 iss - 160 oss - 70 rss - BSP308 Unit - S 500 pF 200 1999-09-22 ...

Page 4

... 100 A/µ Preliminary data = 25 °C, unless otherwise specified j Symbol (plateau) Symbol Page 4 BSP308 Values Unit min. typ. max. - 1.9 2 5.4 8 Values Unit min. typ. max 4 18.8 - ...

Page 5

... K 160.0µ Page BSP308 100 120 = BSP308 single pulse - 1999-09-22 BSP308 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 6

... V 0. 2.5 a 0.00 V 5.0 0 Typ. forward transconductance parameter 5 Page 6 BSP308 ) [ 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 =25° 1999-09- ...

Page 7

... µs p BSP308 °C typ 150 °C typ °C (98 150 °C (98 0.0 0.4 0.8 1.2 1.6 2.0 1999-09-22 BSP308 °C °C °C °C 180 180 180 180 2.4 3 ...

Page 8

... Gate parameter 4.7 A pulsed D BSP308 0,2 DS max Preliminary data Drain-source breakdown voltage V (BR)DSS BSP308 0 max - Gate Page 8 BSP308 = °C - 100 1999-09-22 180 T j ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 9 BSP308 1999-09-22 ...

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