SST25VF010-20-4C-QA Silicon Storage Technology, Inc., SST25VF010-20-4C-QA Datasheet

SST25VF010-20-4C-QA

Manufacturer Part Number

SST25VF010-20-4C-QA

Description

Voltage = 2.7 to 3.6 ;; Density = 1Mb ;; Organization = 128Kb X 8 ;; Speed = 0 - 20 MHZ ;; Temp. = Commercial ;; Package = Qfn/wson

Manufacturer

Silicon Storage Technology, Inc.

Datasheet

1.SST25VF010-20-4C-QA.pdf (22 pages)

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FEATURES:

• Single 2.7-3.6V Read and Write Operations

• Serial Interface Architecture

• 20 MHz Max Clock Frequency

• Superior Reliability

• Low Power Consumption:

• Flexible Erase Capability

• Fast Erase and Byte-Program:

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-com-

patible interface that allows for a low pin-count package

occupying less board space and ultimately lowering total

system costs. SST25VF010 SPI serial flash memory is

manufactured with SST’s proprietary, high performance

CMOS SuperFlash Technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability

and

approaches.

The SST25VF010 device significantly improves perfor-

mance, while lowering power consumption. The total

energy consumed is a function of the applied voltage,

S71233-01-000

– SPI Compatible: Mode 0 and Mode 3

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

manufacturability

8/03

SST25VF0101 Mb Serial Peripheral Interface (SPI) flash memory

compared

1 Mbit SPI Serial Flash

with

SST25VF010

alternate

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Auto Address Increment (AAI) Programming

• End-of-Write Detection

• Hold Pin (HOLD#)

• Write Protection (WP#)

• Software Write Protection

• Packages Available

current, and time of application. Since for any given volt-

age range, the SuperFlash technology uses less current

to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less

than alternative flash memory technologies. The

SST25VF010 device operates with a single 2.7-3.6V

power supply.

The SST25VF010 device is offered in both 8-lead SOIC

and 8-contact WSON packages. See Figure 1 for the pin

assignments.

– Decrease total chip programming time over

– Software Status

– Suspends a serial sequence to the memory

– Enables/Disables the Lock-Down function of the

– Write protection through Block-Protection bits in

– 8-lead SOIC (4.9mm x 6mm)

– 8-contact WSON

Byte-Program operations

without deselecting the device

status register

These specifications are subject to change without notice.

Data Sheet

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