TS820-400 ST Microelectronics, Inc., TS820-400 Datasheet - Page 5
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TS820-400
Manufacturer Part Number
TS820-400
Description
8A SCRS
Manufacturer
ST Microelectronics, Inc.
Datasheet
1.TS820-400.pdf
(9 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
TS820-400B-TRIBM
Manufacturer:
ST
Quantity:
20 000
Fig. 3-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board for
DPAK).
Fig. 4-2: Relative variation of gate trigger current
and holding current versus junction temperature
for TN8 & TYN series.
Fig. 6:
versus gate-cathode resistance (typical values)
for TS8 series.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
-40
1E-2
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
K = [Zth(j-a)/Rth(j-a)]
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
-20
IGT
Relative variation of dV/dt immunity
1E-1
0
20
1E+0
DPAK
40
Rgk(k )
Tj(°C)
tp(s)
60
1E+1
TO-220AB
80
100
IH & IL
1E+2
120
5E+2
140
Fig. 4-1: Relative variation of gate trigger current
and holding current versus junction temperature
for TS8 series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS8 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS8 series.
15.0
12.5
10.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5
5.0
2.5
0.0
-40
IH[Rgk] / IH[Rgk = 1k ]
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
0
dV/dt[Cgk] / dV/dt [Rgk = 220
VD = 0.67 x VDRM
-20
20
Tj = 125°C
Rgk = 220
IGT
40
0
TN8, TS8 and TYNx08 Series
60
20
80 100 120 140 160 180 200 220
Rgk(k )
40
Cgk(nF)
Tj(°C)
60
Rgk = 1k
IH & IL
]
80
100
120
140
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