TS420-400 ST Microelectronics, Inc., TS420-400 Datasheet - Page 4

• Manufacturer Part Number: TS420-400
• Description: 4A SCRS
• Manufacturer: ST Microelectronics, Inc.

TS420 Series
4/8
Fig. 4: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles.
35
30
25
20
15
10
10.00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
1.00
0.10
0.01
1
-40
ITSM(A)
Number of cycles
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
0
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
-20
0.2
Tcase = 115 °C
IGT
Repetitive
0.4
0
Tj initial = 25 °C
Non repetitiv e
10
0.6
20
0.8 1.0
40
Tj(°C)
Rgk( )
60
Rgk = 1k
1.2
IH & IL
100
80
1.4
100
VD=0.67xVDRM
1.6
tp = 10ms
One cycle
Tj=125°C
120
1.8
1000
140
2.0
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
300
100
10
10
8
6
4
2
0
1
0.01
0
dV/dt[Cgk] / dV/dt [Rgk = 220
IH[Rgk] / IH[Rgk = 1k ]
ITSM(A),I
VD = 0.67 x VDRM
limitattion
Rgk = 220
Tj = 125°C
dI/dt
2
4
2
t(A
2
6
s)
0.10
8
Rgk(k
Cgk(nF)
10
tp(ms)
12
]
14
1.00
ITSM
16
Tj initial = 25 °C
18
I
2
t
20
10.00
22