STB80NF55-08 ST Microelectronics, Inc., STB80NF55-08 Datasheet
STB80NF55-08
Manufacturer Part Number
STB80NF55-08
Description
N-channel 55V - 0.0065 Ohm - 80A D2PAK/I2PAK/TO-220 StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet
1.STB80NF55-08.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55-08
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STB80NF55-08-1
Manufacturer:
ST
Quantity:
12 500
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
remarkable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
(
March 2002
.
STB80NF55-08/-1
STP80NF55-08
TYPICAL R
LOW THRESHOLD DRIVE
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Current limited by package
Symbol
I
E
Pulse width limited by safe operating area.
DM
V
I
V
V
P
AS (1)
T
D
DGR
I
T
GS
stg
DS
(
D
tot
(
critical
j
TYPE
N-CHANNEL 55V - 0.0065
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
alignment
(on) = 0.0065
V
55 V
55 V
DSS
Parameter
steps
<0.008
<0.008
R
DS(on)
C
GS
= 25°C
GS
STB80NF55-08 STB80NF55-08-1
= 20 k )
therefore
= 0)
C
C
= 25°C
= 100°C
80 A
80 A
I
D
a
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) Starting T
- 80A D
TO-263
D
2
PAK
j
1
= 25
3
-55 to 175
o
Value
C, I
± 20
320
300
870
2
55
55
80
57
2
PAK/I
D
STP80NF55-08
= 40A, V
TO-220
DD
2
= 30V
PAK/TO-220
1
2
3
I
2
TO-262
PAK
W/°C
Unit
mJ
°C
W
V
V
V
A
A
A
1 2
1/11
3
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