STB3NC60 ST Microelectronics, Inc., STB3NC60 Datasheet - Page 3

• Manufacturer Part Number: STB3NC60
• Description: N-channel 600V - 3.3 Ohm - 3A - D2PAK/I2PAK Powermesh ii MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for D
Symbol
Symbol
Symbol
V
I
SDM
t
t
SD
I
r(Vof f)
Q
Q
d(on)
I
RRM
Q
Q
t
t
SD
t
t
c
rr
r
gs
gd
f
g
rr
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
2
PAK/I
2
PAK
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 3 A
= 3 A
= 300 V
= 480 V
= 480 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
di/dt = 100 A/ s
V
V
GS
I
GS
I
I
D
V
D
D
T
= 0
= 3 A V
GS
j
= 1.5 A
= 3 A
= 10 V
= 150
= 10 V
Thermal Impedancefor D
o
GS
C
= 10 V
Min.
Min.
Min.
2
PAK/I
Typ.
Typ.
Typ.
420
2.3
4.4
1.5
7.1
13
13
13
15
21
9
2
PAK
Max.
Max.
Max.
18.2
1.6
12
STB3NC60
3
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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