STB11NB40T4 ST Microelectronics, Inc., STB11NB40T4 Datasheet - Page 4

• Manufacturer Part Number: STB11NB40T4
• Description: N-channel 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB11NB40/STB11NB40-1
Table 11. Source Drain Diode
Note: 1. Pulse width limited by safe operating area
Figure 3. Safe Operating Area
Figure 5. Output Characteristics
4/11
Symbol
I
V
SDM
I
RRAM
SD
I
Q
SD
t
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
rr
rr
(2)
(1)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCharge
Parameter
I
V
(see test circuit, Figure 18)
I
SD
SD
DD
= 10.7 A; V
= 10.7 A; di/dt = 100 A/µs
= 100 V; T
Test Conditions
GS
j
= 150 °C
= 0
Figure 4. Thermal Impedance
Figure 6. Transfer Characteristics
Min.
Typ.
400
3.4
17
Max.
10.7
42.8
1.6
Unit
µC
ns
A
V
A
A