STB10NC50 ST Microelectronics, Inc., STB10NC50 Datasheet

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STB10NC50

Manufacturer Part Number
STB10NC50
Description
N-channel 500V - 0.48 Ohm - 10A - I2PAK/D2PAK Powermesh MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB10NC50-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB10NC50-1
Manufacturer:
ST
0
Part Number:
STB10NC50T4
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1999
STB10NC50-1
Symbol
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
P
T
DGR
I
I
T
stg
DS
GS
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
N - CHANNEL 500V - 0.48 - 10A - I
500 V
V
= 0.48
DSS
< 0.52
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
10 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
10 A, di/dt 100 A/ s, V
I
2
PAK
1 2
STB10NC50-1
3
-65 to 150
Value
1.08
DD
500
500
135
150
6.3
10
40
3
30
2
V
PAK/D
(BR)DSS
D
PRELIMINARY DATA
2
PAK
, Tj
MOSFET
T
JMAX
2
PAK
1
W/
V/ns
Unit
o
o
W
V
V
V
A
A
A
C
C
o
3
C
1/7

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STB10NC50 Summary of contents

Page 1

... December 1999 PowerMESH I DS(on INTERNAL SCHEMATIC DIAGRAM Parameter = 100 di/dt 100 STB10NC50 PAK/D MOSFET PRELIMINARY DATA PAK D PAK Value 500 500 30 10 6.3 40 135 1.08 3 -65 to 150 150 ...

Page 2

... STB10NC50 -1 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... 4 Test Conditions I = =10 A di/dt = 100 150 STB10NC50 -1 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 10 ...

Page 4

... STB10NC50 -1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... B 0.7 B1 1.2 B2 1.25 C 0.45 C2 1.21 D 8. 13.2 L1 3. MAX. MIN. 4.6 0.169 2.69 0.098 0.93 0.027 1.38 0.047 1.4 0.049 0.6 0.017 1.36 0.047 9.35 0.352 2.64 0.096 10.28 0.393 13.5 0.519 3.78 0.137 1.4 0.050 L1 D STB10NC50 -1 inch TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 0.053 0.368 0.104 0.404 0.531 0.149 0.055 L P011P5/C 5/7 ...

Page 6

... STB10NC50 -1 DIM. MIN. A 4.3 A1 2.49 B 0.7 B2 1.25 C 0.45 C2 1. 1. 6/7 2 TO-263 (D PAK) MECHANICAL DATA mm TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1. inch MIN. TYP. MAX. 0.169 0.181 0.098 0.106 0.027 0.036 0.049 0.055 0.017 0.023 0.047 0.053 0.352 0.368 0.393 0.404 0.192 ...

Page 7

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com . STB10NC50 -1 7/7 ...

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