STB10NB20 ST Microelectronics, Inc., STB10NB20 Datasheet - Page 3

• Manufacturer Part Number: STB10NB20
• Description: N-channel 200V - 0.30 Ohm - 10A - D2PAK Powermesh MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
( )
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
r(Voff)
SD
Q
Q
d(on)
RRM
I
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
r
rr
g
(*)
( )
Turn-on Delay Time Rise Time V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
R
(see test circuit, Figure 3)
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 10 A
= 10 A
=160V I
= 100 V
= 160 V
= 50 V
Test Conditions
Test Conditions
Test Conditions
D
=10A V
di/dt = 100 A/µs
Thermal Impedance
V
V
GS
T
GS
I
V
D
j
GS
I
= 150 °C
= 5 A
D
= 0
= 10 V
GS
= 10 A
= 10 V
=10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
11.5
170
980
7.5
5.5
10
15
17
10
20
8
Max.
Max.
Max.
STB10NB20
1.5
14
20
24
11
14
28
10
40
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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