STB10NA40 ST Microelectronics, Inc., STB10NA40 Datasheet - Page 3

• Manufacturer Part Number: STB10NA40
• Description: Old PRODUCT: Not Suitable For Design-in
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
RRM
Q
Q
t
t
SD
t
t
rr
gs
gd
c
r
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 47
= 47
= 47
= 10 A
= 10 A
= 200 V
= 320 V
= 320 V
= 320 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
di/dt = 100 A/ s
V
GS
GS
I
V
I
V
I
I
D
D
D
D
T
GS
GS
= 10 V
j
= 5 A
= 10 A
= 10 A
= 10 A V
= 0
= 150
= 10 V
= 10 V
Thermal Impedance
o
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
27.5
115
250
120
470
6.5
35
54
27
75
30
8
Max.
Max.
Max.
STB10NA40
155
105
160
1.6
50
75
45
10
40
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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