SB240 Micro-Electro-Magnetical Tech., SB240 Datasheet
SB240
Manufacturer Part Number
SB240
Description
Schottky Wafer, 2A40V 49mil
Manufacturer
Micro-Electro-Magnetical Tech.
Datasheet
1.SB240.pdf
(1 pages)
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Part Number:
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General Description:
DC Blocking Voltage:
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Voltage
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
SCHOTTKY DIE SPECIFICATION
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
D
A
@ 2 Amperes, Ta=25°C
VR= 40 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Top-side Metal
B
40 V 2 A Standard VF
Ir=0.5mA (for dice form)
Ir=1mA(for wafer form)
C
SiO2 Passivation
P
Back-side Metal
Micro-Electro-Magnetical Tech Co.
+
Guard Ring
DICE OUTLINE DRAWING
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
PS:
VF MAX
IR MAX
Cj MAX
VRRM
TSTG
SYM
IFAV
IFSM
DIM
Tj
A
C
D
B
Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Thickness (Max)
Spec. Limit
-65 to +150
-65 to +150
ITEM
0.55
0.5
40
60
2
TYPE: SB240
Single Anode
Die Sort UNIT
1245
1025
1203
42.5
0.48
0.25
um
254
305
2
49.01
40.3
41.1
Amp
Amp
Mil
Volt
Volt
mA
pF
°C
°C
10
12
2
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