HSMS-2825-TR2 Agilent(Hewlett-Packard), HSMS-2825-TR2 Datasheet - Page 2

• Manufacturer Part Number: HSMS-2825-TR2
• Description: Surface Mount RF Schottky Barrier Diodes
• Manufacturer: Agilent(Hewlett-Packard)

Pin Connections and
Package Marking
1
2
3
Notes:
1. Package marking provides
2. See “Electrical Specifications” for
Electrical Specifications T
Notes:
1. V
2. C
3. Package marking code is in white.
4. Effective Carrier Lifetime ( ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled “Quad Capacitance.”
6. R
7. Package marking code is laser marked.
Number Marking Lead
HSMS
Test Conditions
282M
282N
Part
282B
282C
282E
282F
282K
282L
282P
282R
orientation and identification.
appropriate package marking.
2820
2822
2823
2824
2825
2827
2828
2829
D
F
TO
= R
for diodes in pairs and quads in 15 mV maximum at 1 mA.
[5]
for diodes in pairs and quads is 0.2 pF maximum.
S
+ 5.2
Package
Code
HH
NN
OO
CK
CP
C0
C2
C3
C4
C5
C7
C8
C9
C0
C2
C3
C4
CL
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[7]
[7]
[7]
[7]
[7]
[7]
[7]
[7]
[7]
[7]
at 25 C and I
Code Configuration
M
N
0
2
3
4
5
7
8
9
B
C
E
F
K
L
P
R
6
5
4
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
Bridge Quad
Cross-over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
f
= 5 mA.
Unconnected Pair
[5]
[5]
C
Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
2. T
= 25 C, Single Diode
Symbol Parameter
I
P
T
T
the device.
contact is made to the circuit board.
f
jc
IV
j
stg
C
= +25 C, where T
Breakdown
I
Minimum
R
Forward Current (1 s Pulse) Amp
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
Voltage
V
= 100 A I
BR
15
(V)
2
Maximum
C
F
Forward
V
Voltage
is defined to be the temperature at the package pins where
= 1 mA
F
340
(mV)
[2]
[1]
[4]
Maximum
Forward
V
0.5
Voltage
I
F
F
(mA)
(V) @
Unit SOT-23/SOT-143 SOT-323/SOT-363
C/W
V
10
C
C
[1]
T
Maximum
I
Leakage
Reverse
R
C
100
V
(nA) @ Capacitance Resistance
R
-65 to 150
= 25 C
(V)
150
500
15
1
1
f = 1 MHz
Maximum
C
V
T
F
1.0
= 0 V
(pF)
[2]
-65 to 150
150
150
15
R
1
Dynamic
I
Typical
F
D
= 5 mA
( )
12
[6]