HSMP-3864 Agilent, HSMP-3864 Datasheet - Page 2

• Manufacturer Part Number: HSMP-3864
• Description: (HSMP-38xx / HSMP-48xx) Surface Mount PIN Diodes
• Manufacturer: Agilent

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PIN Attenuator Diodes
Electrical Specifications T
PIN Switching Diodes
Electrical Specifications T
Note:
1. Package marking code is white.
Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
2. CW Power Dissipation at T
Symbol
Number
Number
HSMP-
HSMP-
Test Conditions
T
this device.
Test Conditions
Part
Part
3800
3802
3804
3810
3812
3813
3814
3820
3822
3823
3824
3880
3890
3892
3893
3894
3895
P
P
T
STG
I
f
iv
t
j
Marking
Package
Marking
Package
Forward Current (1 ms Pulse)
Total Device Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Code
Code
D0
D2
D4
G0
G2
G3
G4
G5
E0
E2
E3
E4
F0
F2
F3
F4
S0
[1]
[1]
Parameter
Code Configuration
Lead
Code Configuration
Lead
0
2
4
0
2
3
4
0
2
3
4
0
0
2
3
4
5
LEAD
Single
Series
Common Cathode
Single
Series
Common Anode
Common Cathode
Single
Series
Common Anode
Common Cathode
Single
Single
Series
Common Anode
Common Cathode
Unconnected Pair
= 25 C. Derate to zero at maximum rated temperature.
A
A
= 25 C (Each Diode)
= 25 C
[1]
T
A
Equivalent
Axial Lead Breakdown
Units Absolute Maximum
mW
Equivalent
Amp
Axial Lead
= 25 C
Part No.
Nearest
Part No.
—
Nearest
5082-
C
C
3080
3081
5082-
3188
[2]
—
—
Minimum
I
V
Same as V
Measure
R
Voltage
V
Breakdown
R
-65 to 150
BR
Minimum
I
V
100
100
Voltage
Measure
R
V
= V
10 A
R
BR
(V)
250
150
100
100
= V
50
10 A
BR
1
(V)
BR
BR
Resistance Capacitance Resistance Resistance
f = 100 MHz
I
Maximum
F
R
Series
= 100 mA
S
2.0
3.0
( )
Resistance
f = 100 MHz
I
Maximum
F
I
F
R
Series
= 10 mA*
= 5 mA
S
0.6*
6.5
2.5
( )
Maximum
V
f = 1 MHz
C
R
Total
T
0.37
0.35
2
= 50 V
(pF)
Capacitance
Maximum
V
V
V
f = 1 MHz
C
R
R
R
Total
0.30**
T
= 20 V*
0.8*
0.40
= 5 V**
= 50 V
(pF)
I
f = 100 MHz
F
Minimum
R
= 0.01 mA
High
1000
1500
H
( )
P
2 f
Shunt Mode
f
Hmd (dBc)
Distortion
in
o
Maximum
Harmonic
o,
= 400 MHz
0 V bias
= +30 dBm
f= 100 MHz
Maximum
I
Z
F
–55
R
o
—
—
= 20 mA
Low
= 50 W
L
10
8
( )