MA2Z785 Panasonic, MA2Z785 Datasheet
MA2Z785
Manufacturer Part Number
MA2Z785
Description
Silicon epitaxial planar type
Manufacturer
Panasonic
Datasheet
1.MA2Z785.pdf
(2 pages)
Schottky Barrier Diodes (SBD)
MA2Z785
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• S-mini type 2-pin package, allowing high-density mounting
• Allowing to rectify under (I
• Optimum for high-frequency rectification because of its short
• Low V
• Reverse voltage V
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
reverse recovery time (t
Pulse Generator
(PG-10N)
R
2. Rated input/output frequency: 200 MHz
3. * : t
s
= 50 Ω
F
human body and the leakage of current from the operating equipment.
Parameter
(forward rise voltage), with high rectification efficiency
Parameter
rr
*
measuring circuit
Bias Application Unit N-50BU
A
R
*
(DC value) = 50 V guaranteed
W.F.Analyzer
(SAS-8130)
R
rr
i
)
= 50 Ω
F(AV)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
= 100 mA) condition
FM
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
−55 to +125
Rating
300
100
125
50
50
1
V
I
V
I
I
F
F
rr
V
R
R
= 100 mA
= I
R
= 10 mA, R
= 50 V
= 0 V, f = 1 MHz
R
t
= 100 mA
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Unit
mA
mA
°C
°C
V
V
A
t
Conditions
p
L
= 100 Ω
t
I
F
Marking Symbol: 2E
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
0.4 ± 0.1
I
t
rr
rr
K
= 10 mA
2
Min
t
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Typ
25
3
Max
0.55
0.4 ± 0.1
30
1
A
1 : Anode
2 : Cathode
Unit : mm
Unit
µA
pF
ns
V
1
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MA2Z785 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA2Z785 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (I F(AV) • Optimum for high-frequency rectification because of its short reverse recovery time (t ...
Page 2
... MA2Z785 125° 75°C 10 25°C − 20°C 1 −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F −1 10 − 120 160 200 ( °C ) Ambient temperature Schottky Barrier Diodes (SBD) ...