EK42650A-01 Peregrine Semiconductor Corp., EK42650A-01 Datasheet - Page 2

• Manufacturer Part Number: EK42650A-01
• Description: SP3T High Power Ultracmos RF Switch 30 MHz - 1000 MHz
• Manufacturer: Peregrine Semiconductor Corp.

Table 1: Electrical Specifications @ +25 °C, V
Note: 1. The device was matched with ~4 nH inductance per RF port. RX port may not need matching inductor.
Table 2. Operating Ranges
Notes: 1. Supply biased
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE42650A
in the 5x5 QFN package is MSL3.
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 11
Frequency Range
TX Input Power
RX Input Power
V
I
Control Voltage High
Control Voltage Low
T
range (Case)
T
temperature
DD
TX Insertion Loss
RX Insertion Loss (Un-Attenuated State)
RX Insertion Loss (Attenuated State)
0.1 dB Input Compression Point
Isolation (Supply Biased): TX-TX
Isolation (Supply Biased): TX-RX
Unbiased Isolation: ANT - TX, V
V2, V3=0 V
Unbiased Isolation: ANT - RX, V
V2, V3=0 V
RX Port Return Loss
TX and ANT Port Return Loss
TX, 2nd Harmonic
TX, 3rd Harmonic
RX IIP3
Switching Time
OP
j
DD
Operating junction
Power Supply Current
Operating temperature
Power Supply Voltage
2. Supply biased or unbiased
Parameter
Parameter
1
2
(VSWR ≤ 8:1)
(VSWR ≤ 8:1)
1
1
1
DD
DD
, V1,
, V1,
Min
3.2
1.4
-40
30
1
1
Typ
30 MHz ≤ 1 GHz
30 MHz ≤ 1 GHz
800 MHz
800 MHz, 50% duty cycle
800 MHz
800 MHz
800 MHz, +27 dBm
800 MHz, +27 dBm
Un-Attenuated State, 800 MHz
Attenuated State, with external matching inductor optimized without
attenuator engaged, 800 MHz
800 MHz
800 MHz @ 42.5 dBm
800 MHz @ 42.5 dBm
Un-Attenuated State, 800 MHz, 150 kHz tone separation
50% of CTRL to 10/90% of RF
3.3
90
Max
1000
170
140
3.4
0.4
40
27
85
Units
MHz
dBm
dBm
uA
°C
°C
V
V
V
DD
= 3.3 V
Conditions
Table 3. Absolute Maximum Ratings
(Z
Symbol
Notes: 1. Supply biased
Absolute Maximum Ratings
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
T
V
S
V
T
P
CASE
P
V
T
ESD
DD
= Z
ST
IN
D
I
j
2. Supply biased or unbiased
Document No. 70-0267-02
L
= 50 Ω ) unless otherwise noted
Power supply voltage
Voltage on any DC input
Storage temperature range
Maximum case temperature
Peak maximum junction
temperature (10 seconds max)
TX Input Power
(VSWR 20:1, 10 seconds)
TX Input Power
RX Input Power at ANT pin
(VSWR 20:1)
RF Input Power on inactive ports or
supply unbiased
Maximum Power Dissipation from
RF Insertion Loss
ESD Voltage (HBM, MIL_STD 883
Method 3015.7)
Parameter/Conditions
1
1
(50 Ω)
Min
13
30
35
14
18
12
20
30
6
│ UltraCMOS™ RFIC Solutions
2
Typ
23
14.5
45.4
-81
-81
0.1
0.3
0.5
10
33
22
22
18
38
Product Specification
Min Max Units
-0.3
-0.3
-65
Max
-79
-79
0.5
0.9
0.5
16
PE42650A
V
2000
150
200
0.3
2.8
85
40
45
27
27
DD
4
+
Units
dB
dBm
dBm
dBc
dBc
ms
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
°C
°C
°C
W
V
V
V