BGA420E6327 Infineon Technologies Corporation, BGA420E6327 Datasheet - Page 2

• Manufacturer Part Number: BGA420E6327
• Description: Si-mmic-amplifier in Sieget 25-technologie
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
Device current
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1 GHz
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
AC characteristics V
Typical biasing configuration
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
to provide a low impedance path.
boards are recommended to minimize the parasitic inductance to ground.
100 pF
RF IN
D
= 3 V, Z
10 nF
A
o
100 pF
= 25 °C, unless otherwise specified.
= 50

4
1
+
BGA 420
V
D
GND
2
3
2
Symbol
I
|S
S12
NF
IP
P
RL
RL
D
-1dB
21
3out
in
out
100 pF
|
2
min.
5.4
17
15
11
25
10
12
-6
8
-
-
-
RF OUT
EHA07386
Values
typ.
-2.5
6.7
1.9
2.2
2.3
19
17
13
28
13
11
16
max.
Jan-29-2002
2.3
2.6
2.7
8
-
-
-
-
-
-
-
-
BGA420
Unit
mA
dB
dBm
dB