BGA2709 Philips Semiconductors (Acquired by NXP), BGA2709 Datasheet - Page 2

• Manufacturer Part Number: BGA2709
• Description: BGA2709; Mmic Wideband Amplifier;; Package: SOT363 (UMT6)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2002 Aug 06
V
I
|s
NF
P
V
I
P
T
T
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
S
S
SYMBOL
SYMBOL
stg
j
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
Cable systems
LNB IF amplifiers
General purpose
ISM.
S
L(sat)
S
tot
D
MMIC wideband amplifier
21
|
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
PARAMETER
PARAMETER
f = 1 GHz
f = 1 GHz
f = 1 GHz
RF input AC coupled
T
s
CAUTION
90 C
2
PINNING
CONDITIONS
CONDITIONS
Marking code: E3-.
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
5
23.5
22.7
4
12.5
65
TYP.
MIN.
6
Product specification
4
6
6
35
200
+150
150
10
MAX.
MAX.
BGA2709
1
2, 5
3
V
mA
dB
dB
dBm
V
mA
mW
dBm
C
C
UNIT
UNIT