STK433-130-E Sanyo Semicon Device, STK433-130-E Datasheet - Page 7

• Manufacturer Part Number: STK433-130-E
• Description: Thick-Film Hybrid IC 2-channel class AB audio power IC 150W+150W
• Manufacturer: Sanyo Semicon Device

Evaluation Board Characteristics
[Thermal Design Example for STK433-130-E (R L = 6Ω)]
The thermal resistance, θc-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as
follows.
Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125°C.
Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150°C.
However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power
transistors.
The following inequalities result from solving equations (1) and (2) for θc-a.
Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance.
When the following specifications have been stipulated, the required heat sink thermal resistance can be determined
from formulas (1)' and (2)'.
0.001
0.01
100
220
200
180
160
140
120
100
1.0
0.1
10
80
60
40
20
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
10
V CC =±44V
VG=30dB
Rg=600Ω
Tc=25°C
R L =6Ω
2ch Drive
Ch1 measurement
R L =6Ω
2ch Drive
Ch1 measurement
VG=30dB
Rg=600Ω
f=1kHz
Tc=25°C
2 3
20
Pd × θc-a + Ta < 125°C ................................................................................................. (1)
Pd × θc-a + Pd/N × θj-c + Ta < 150°C .......................................................................... (2)
θc-a < (125 − Ta)/Pd ...................................................................................................... (1)'
θc-a < (150 − Ta)/Pd − θj-c/N ........................................................................................ (2)'
• Supply voltage
• Load resistance
• Guaranteed ambient temperature
5 7
1.0
Supply voltage, V CC - ±V
Output power, P O /ch - W
2 3
30
P O - V CC
THD - P O
5 7
10
40
2 3
50
5 7
Ta: Guaranteed ambient temperature for the end product
N: Number of power transistors
θj-c: Thermal resistance per power transistor
100
2 3
60
STK433-130-E
5 7
ITF02723
ITF02725
1000
70
V CC
R L
Ta
220
200
180
160
140
120
100
220
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0.1
10
V CC =±44V
Rg=600Ω
2ch Drive
(same output rating)
f=1kHz
VG=30dB
R L =6Ω
Tc=25°C
V CC =±44V
Rg=600Ω
2ch Drive
Ch1 measurement
VG=30dB
R L =6Ω
Tc=25°C
2 3
2 3
5 7
5 7
100
1.0
Output power, P O /ch - W
2 3
2 3
Frequency, f - Hz
THD=0.4%
THD=10%
Pd - P O
5 7
5 7
P O - f
10
1k
www.DataSheet4U.com
2 3
2 3
5 7
5 7
10k
100
No. A1596-7/11
2 3
2 3
5 7
5 7
ITF02724
ITF02726
1000
100k