STK12C68-M Simtek, STK12C68-M Datasheet - Page 3

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STK12C68-M

Manufacturer Part Number
STK12C68-M
Description
CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM
Manufacturer
Simtek
Datasheet
READ CYCLES #1 & #2
Note c: Bringing E V
Note e: Parameter guaranteed but not tested.
Note f: For READ CYCLE #1 and #2, W is high for entire cycle.
Note g: Device is continuously selected with E low and G low.
Note h: Measured
READ CYCLE #1
READ CYCLE #2
NO.
DQ (Data Out)
10
11
DQ (Data Out)
1
2
3
4
5
6
7
8
9
ADDRESS
ADDRESS
t
t
t
t
t
t
t
t
t
t
t
#1, #2
ELQV
AVAV
AVQV
GLQV
AXQX
ELQX
EHQZ
GLQX
GHQZ
ELICCH
EHICCL
I
CC
G
E
SYMBOLS
g
h
h
e
c,e
200mV from steady state output voltage.
IH
will not produce standby currents until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.
ACTIVE
STANDBY
Alt.
t
t
t
t
t
t
t
t
t
t
t
ACS
RC
AA
OE
OH
LZ
HZ
OLZ
OHZ
PA
PS
f,g
f
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
t
ELICCH
10
SRAM MEMORY OPERATION
PARAMETER
t
AXQX
5
t
ELQX
6
t
GLQX
8
t
GLQV
t
ELQV
4-55
4
1
t
t
AVAV
AVQV
2
3
t
AVAV
2
STK12C68-40M
MIN
40
5
5
0
0
MAX
40
40
20
17
17
35
STK12C68-45M
MIN
45
5
5
0
0
DATA VALID
DATA VALID
MAX
45
45
25
20
20
45
t
GHQZ
(V
9
STK12C68-55M
CC
MIN
t
55
EHQZ
5
5
0
0
7
= 5.0V
STK12C68-M
t
EHICCL
11
MAX
55
55
35
25
25
55
10%)
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
d

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