FS20UMA-5A Mitsubishi Electronics America, Inc., FS20UMA-5A Datasheet - Page 2

• Manufacturer Part Number: FS20UMA-5A
• Description: N-channel Power MOSFET High-speed Switching Use: 250v, 20a
• Manufacturer: Mitsubishi Electronics America, Inc.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
I
I
V
r
V
y
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
fs

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
200
160
120
80
40
50
40
30
20
10
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
4
50
(TYPICAL)
8
100
V
(Tch = 25°C)
GS
12
= 20V,10V,8V,6V
I
V
V
I
I
I
I
V
V
I
Channel to case
D
D
D
D
D
S
GS
DS
DS
DD
= 1mA, V
= 1mA, V
= 10A, V
= 10A, V
= 10A, V
= 10A, V
150
= ±20V, V
= 250V, V
= 25V, V
= 150V, I
P
T
Pulse Test
C
D
16
C
= 135W
(°C)
= 25°C
DS
GS
GS
GS
DS
GS
DS
(V)
GS
5V
4V
D
DS
GS
= 10V
= 0V
200
= 10V
= 10V
= 0V
= 10V
20
= 10A, V
= 0V, f = 1MHz
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
7
1
0
= R
0
2
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
T
Single Pulse
T
Pulse Test
3 5 7
GS
C
C
= 25°C
= 25°C
OUTPUT CHARACTERISTICS
= 50Ω
1.0
MITSUBISHI Nch POWER MOSFET
10
1
HIGH-SPEED SWITCHING USE
2
(TYPICAL)
2.0
3 5 7
Min.
250
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
3.0
V
20V,10V,8V,6V,5V
2
GS
FS20UMA-5A
2
=
Limits
2250
0.15
1.50
20.0
Typ.
220
400
3.0
1.5
3 5
65
35
60
90
100µs
10ms
—
—
—
—
tw =
10µs
1ms
DC
4.0
DS
DS
7
10
4.5V
(V)
(V)
4V
3
Max.
±0.1
0.20
2.00
0.93
4.0
2.0
5.0
—
—
—
—
—
—
—
—
—
1
2
Sep. 2001
°C/W
Unit
mA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
V
S
V