CEM9935A Chino Excel Technology, CEM9935A Datasheet - Page 3

• Manufacturer Part Number: CEM9935A
• Description: N-channel Enhancement Mode Field Effect Transistor SO8 Package
• Manufacturer: Chino Excel Technology

ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
1000
600
400
200
800
12
20
16
0
8
4
0
Figure 1. Output Characteristics
0
0
V
V
DS
DS
0.5
Figure 3. Capacitance
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
5
1.0
V
GS
=4.5,3.5,2.5V
1.5
10
2.0
Coss
Ciss
Crss
Symbol
V
15
GS
2.5
V
=2.0V
SD
A
3.0
=25 C unless otherwise noted)
20
5-145
b
V
GS
Condition
= 0V, Is =1.7A
Figure 4. On-Resistance Variation with
1.80
1.60
1.40
1.20
1.00
0.80
0.60
15
12
9
6
3
0
-50 -25
Figure 2. Transfer Characteristics
0.5
CEM9935A
V
I
GS
D
=4.3A
Tj=125 C
V
=4.5V
GS
T
1
, Gate-to-Source Voltage (V)
J
0
, Junction Temperature( C)
25
25 C
Temperature
1.5
50
Min Typ Max Unit
75
-55 C
2
100 125 150
C
2.5
1.3
V
5