CEM9925 Chino Excel Technology, CEM9925 Datasheet - Page 3

• Manufacturer Part Number: CEM9925
• Description: 20V Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
1200
1000
Parameter
800
600
400
200
6.0
5.0
4.0
3.0
1.0
0
0
Figure 1. Output Characteristics
0
0
V
V
DS
DS
Figure 3. Capacitance
0.1
5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
0.2
10
15
0.4
V
GS
=2.5,3.5,4.5V
0.5
20
Coss
Crss
Ciss
Symbol
V
GS
V
0.6
=1.5V
25
SD
A
30
=25 C unless otherwise noted)
0.7
5-135
b
V
GS
Condition
Figure 4. On-Resistance Variation with
= 0V, Is =5.0A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
25
20
15
10
0.0
5
0
Figure 2. Transfer Characteristics
0
Drain Current and Temperature
V
1.0
GS
CEM9925
, Gate-to-Source Voltage (V)
I
Tj=125 C
5
D
, Drain Current(A)
2.0
10
3.0
Min Typ Max Unit
4.0
25 C
-55 C
15
0.8
V
Tj=125 C
5.0
GS
-55 C
25 C
C
=4.5V
6.0
1.2
20
V
5