CEM8208 Chino-Excel Technology Corp., CEM8208 Datasheet - Page 2

• Manufacturer Part Number: CEM8208
• Description: Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Corp.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
c
c
b
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
Q
I
I
I
GS(th)
DS(on)
C
C
C
d(on)
d(off)
Q
Q
DSS
GSSF
GSSR
g
I
t
t
SD
S
iss
oss
rss
r
gd
f
gs
FS
DSS
g
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 40V, V
= 12V, V
= -12V, V
= V
= 4.5V, I
= 2.5V, I
= 10V, I
= 25V, V
= 10V, I
= 4.5V, R
= 10V, I
= 4.5V
= 0V, I
DS
, I
D
S
D
D
D
D
= 250 µ A
D
D
= 7A
GS
GS
DS
DS
GEN
= 7A
=7A,
= 250 µ A
= 1A,
= 7A
= 5.6A
= 0V,
= 0V
= 0V
= 0V
= 6Ω
Min
0.5
20
CEM8208
0.34
0.68
3.58
Typ
115
4.2
1.0
2.4
18
24
14
40
15
2
Max
0.68
1.72
7.16
-10
1.2
5.6
1.5
1.2
10
22
32
1
4
Units
mΩ
mΩ
µ A
uA
uA
nC
nC
nC
pF
pF
pF
us
us
us
us
V
V
S
A
V
6